154PPB630K

0.15μF Film Capacitor 400V 630V Polypropylene (PP), Metallized Radial 1.260" L x 0.433" W (32.00mm x 11.00mm)

3757 W. Touhy Ave., Lincolnwood, IL 60712 ? (847) 675-1760 ? Fax (847) 673-2850 ? www.illcap.com 188 ? Polypropylene Film Capacitors for Power Semiconductor Circuits PPB ? Snubber Capacitor for Energy Conversion ? Power Semiconductor Circuits ? SCR Communication ? TV Deflection ckts. ? High Voltage ? High Current ? High Pulse Current Applications Operating Temperature Range Capacitance Tolerance +/- 10% at 1kHz, 20?C Dissipation Factor (max) at 20?C. Insulation Resistance @20?C(<70% RH) for 1 minute at 100VDC Dielectric Strength 160% of rated VDC for 2 seconds at 20°C between leads Load Life 2000 hours at 85°C±2°C with 125% of rated voltage Self inductance <1nH/mm of capacitor lead spacing Capacitance drift <0.5% up to 40°C after 2 years Temperature Coefficient -200ppm/?C +/- 100ppm/?C Reliability fit=1x10 9 Failures/component hours. Applied Voltage=0.5xVDC Temperature=+40°C±2°C Dielectric Polypropylene Electrodes Vacuum deposited metal layers Construction Extended dou

PPB Radial leaded metallized polypropylene film capacitors for Pulse applications Features ? Self Healing ? Stable with frequency and temperature ? High dvdt ? High Voltage Applications ? Power semiconductor circuits ? Switching power supplies ? SRC Commutation ? Ballasts Specifications Operating Temperature Range -55°C to +105°C Capacitance Tolerance +10% at 1 kHz, 25°C +5% optional WVDC 250 400 630 1000 1600 2000 VAC 160 200 400 630 650 700 AC voltage (50/60 Hz) For T>+85°C , The voltage (DC/AC)must be decreased by (1.5/2.25)% per °C Frequency (kHz) C<0.1uF 0.1uF5uF 1 0.04% 0.04% 0.05% 10 0.05% 0.06% - Dissipation Factor (MAX) 25°C 100 0.16% - - Capacitance Insulation Resistance <0.33 μF 100000 M ? Insulation Resistance @25°C (<70% RH)for 1 minute at 100VDC applied >0.33 μF 30000 M?x μF Self Inductance <1 nano-Henry per mm of lead spacing Capacitance Drift Factor <0.5% after 2 years at 40°C 2000 Hours, +85C with 125% of

FEATURES High Pulse Currents - High voltage APPLICATIONS Power Semiconductor Circuits – SCR Commutation – Ballasts controls – Switching Power Supplies Operating Temperature Range -55°C to +105°C Capacitance Tolerance +10% at 1 kHz, 25°C +5% optional WVDC 250 400 630 100 0 1600 2000 VAC 160 200 400 630 650 700 AC voltage (50/60 Hz) For T>+85°C , The voltage (DC/AC)must be decreased by (1.5/2.25)% per °C Frequency (kHz) C<0.1uF 0.1uF1uF 1 0.05% 0.04% 0.05% 10 0.05% 0.06% - Dissipation Factor (MAX) 25°C 100 0.16% - - Capacitance Insulation Resistance <0.33 μF 100000 M ? Insulation Resistance @25°C (<70% RH)for 1 minute at 100VDC applied >0.33 μF 30000 M?x μF Self Inductance <1 nano-Henry per mm of lead spacing Capacitance Drift Factor <0.5% after 2 years at 40°C 2000 Hours, +85C with 125% of rated voltage Capacitance Change <1% of initially measured value Dissipation Factor <0.001 at 10kHz and 25°C for C<1uF <0.001 at 1kHz and 25

3757 W. Touhy Ave., Lincolnwood, IL 60712 ? (847) 675-1760 ? Fax (847) 673-2850 ? www.illcap.com 188 ? Polypropylene Film Capacitors for Power Semiconductor Circuits PPB ? Snubber Capacitor for Energy Conversion ? Power Semiconductor Circuits ? SCR Communication ? TV Deflection ckts. ? High Voltage ? High Current ? High Pulse Current Applications Operating Temperature Range Capacitance Tolerance +/- 10% at 1kHz, 20?C Dissipation Factor (max) at 20?C. Insulation Resistance @20?C(<70% RH) for 1 minute at 100VDC Dielectric Strength 160% of rated VDC for 2 seconds at 20°C between leads Load Life 2000 hours at 85°C±2°C with 125% of rated voltage Self inductance <1nH/mm of capacitor lead spacing Capacitance drift <0.5% up to 40°C after 2 years Temperature Coefficient -200ppm/?C +/- 100ppm/?C Reliability fit=1x10 9 Failures/component hours. Applied Voltage=0.5xVDC Temperature=+40°C±2°C Dielectric Polypropylene Electrodes Vacuum deposited metal layers Construction Extended dou

PPB Radial leaded metallized polypropylene film capacitors for Pulse applications Features ? Self Healing ? Stable with frequency and temperature ? High dvdt ? High Voltage Applications ? Power semiconductor circuits ? Switching power supplies ? SRC Commutation ? Ballasts Specifications Operating Temperature Range -55°C to +105°C Capacitance Tolerance +10% at 1 kHz, 25°C +5% optional WVDC 250 400 630 1000 1600 2000 VAC 160 200 400 630 650 700 AC voltage (50/60 Hz) For T>+85°C , The voltage (DC/AC)must be decreased by (1.5/2.25)% per °C Frequency (kHz) C<0.1uF 0.1uF5uF 1 0.04% 0.04% 0.05% 10 0.05% 0.06% - Dissipation Factor (MAX) 25°C 100 0.16% - - Capacitance Insulation Resistance <0.33 μF 100000 M ? Insulation Resistance @25°C (<70% RH)for 1 minute at 100VDC applied >0.33 μF 30000 M?x μF Self Inductance <1 nano-Henry per mm of lead spacing Capacitance Drift Factor <0.5% after 2 years at 40°C 2000 Hours, +85C with 125% of

FEATURES High Pulse Currents - High voltage APPLICATIONS Power Semiconductor Circuits – SCR Commutation – Ballasts controls – Switching Power Supplies Operating Temperature Range -55°C to +105°C Capacitance Tolerance +10% at 1 kHz, 25°C +5% optional WVDC 250 400 630 100 0 1600 2000 VAC 160 200 400 630 650 700 AC voltage (50/60 Hz) For T>+85°C , The voltage (DC/AC)must be decreased by (1.5/2.25)% per °C Frequency (kHz) C<0.1uF 0.1uF1uF 1 0.05% 0.04% 0.05% 10 0.05% 0.06% - Dissipation Factor (MAX) 25°C 100 0.16% - - Capacitance Insulation Resistance <0.33 μF 100000 M ? Insulation Resistance @25°C (<70% RH)for 1 minute at 100VDC applied >0.33 μF 30000 M?x μF Self Inductance <1 nano-Henry per mm of lead spacing Capacitance Drift Factor <0.5% after 2 years at 40°C 2000 Hours, +85C with 125% of rated voltage Capacitance Change <1% of initially measured value Dissipation Factor <0.001 at 10kHz and 25°C for C<1uF <0.001 at 1kHz and 25