13003

Dated : 17/09/2016 Rev: 01 TOP DYNAMIC 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Collector Base Voltage V CBO 600 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage V EBO 9 V Collector Current I C 1.5 A Power Dissipation P tot 1.5 W Junction Temperature T j 150 O C Storage Temperature Range T s -55 to +150 O C Characteristics at T amb = 25 O C Parameter Symbol Min. Max. Unit DC Current Gain at V CE = 10 V, I C = 100 mA h FE 10 70 - Collector Base Breakdown Voltage at I C = 1 mA V (BR)CBO 600 - V Collector Emitter Breakdown Voltage at I C = 10 mA V (BR)CEO 400 - V Emitter Base Breakdown Voltage at I E = 1 mA V (BR)EBO 9 - V Collector Cutoff Current at V CB = 600 V I CBO - 100

2609 Bartram Road ? Bristol, PA 19007-6810 USA TEL 215-781-9956 ? FAX 215-781-9845 WWW.ARIESELEC.COM ? INFO@ARIESELEC.COM 13003 Rev. 6.1 1 of 1 CUSTOMIZATION: ARIES SPECIALIZES IN CUSTOM DESIGN AND PRODUCTION. SPECIAL MATERIALS, PLATINGS, SIZES, AND CONFIGURATIONS CAN BE FURNISHED, DEPENDING ON QUANTITY. ARIES RESERVES THE RIGHT TO CHANGE PRODUCT GENERAL SPECIFICATIONS WITHOUT NOTICE PRINTOUTS OF THIS DOCUMENT MAY BE OUT-OF-DATE AND SHOULD BE CONSIDERED UNCONTROLLED ALL DIMENSIONS: INCHES [MILLIMETERS] ALL TOLERANCES: ±0.005 [0.13] UNLESS OTHERWISE SPECIFIED FOR HORIZONTAL MOUNTING, SEE DATA SHEET 13005 CONSULT FACTORY FOR OTHER SIZES AND CONFIGURATIONS Series 810 & 822 Economy Vertisocket TM w/Bifurcated Contacts FEATURES ? H i g h - v ol u m e V e r ti ca l D i s p l a y Mo u nti n g A p p l i ca tio ns ? Us efu l f o r C o n n e ctio n of Boa rd - t o-Boa rd Ju m p e rs a n d DI P S w i t c h e s , as w e l l as L ED D e v i c e s GENERAL

TO-220 Plastic-Encapsulate Transistors 13003 TRANSISTOR (NPN) FEATURES · power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base V oltage 700 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 9 V I C Collector Current -Continuous 1.5 A P C Collector Power Dissipation 2 W T J Junction Temperature 150 T stg Storage Temperature -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol S ymbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =5mA, I E=0 700 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA, I B =0 400 V Emitter-base breakdown voltage V (BR)EBO I E=2mA, I C=0 9 V Collector cut-off current I CBO V CB=700V,I E=0 1 mA Collector cut-off current I CEO V CE=400V,I B=0 0.5 mA Emitter cut-off current I EBO V EB=9V, I C=0 1 mA h FE1 V CE =5V, I C = 0.5 A 8 40 DC

FEATURES AND SPECIFICATIONS SPECIFICATIONS n Mini-Change and Micro-Change are proven, rugged connector designs n IP67-rated connectors provide a dust-tight and water-tight connection n Quick-connect, modular wiring system with keyed, pre-wired molded connectors provide fast installation that eliminates field wiring errors n Foundation Fieldbus ‘Type A’ compliant shielded cables allows users to take full advantage of the maximum run lengths possible per the protocol while minimizing the potential for communication errors n Stainless steel or nickel plated cordset coupling nuts and receptacle shells ensure corrosion resistance in demanding environments Features and Benefits Mini-Change Micro-Change Molex releases the Brad Mini-Change and Micro-Change molded connection systems for fast, error-free Foundation Fieldbus installations Foundation Fieldbus is a communication protocol used to interconnect field-level instrumentation and control devices to a PLC (Programmable Logic

This document was generated on 06/02/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: 1300370008 Status: Active Overview: devicenet_industrial_networks Description: DeviceNet* Micro-Change? (M12), 8 Port, 5 Poles, Male Documents: Drawing (PDF) RoHS Certificate of Compliance (PDF) General Product Family Passive Distribution Boxes Series 130037 IP Rating IP67 Overview devicenet_industrial_networks Product Name DeviceNet*, Micro-Change? (M12) Physical Bus I/O Micro-Change? (M12) Cable Connector Orientation N/A Cable Length N/A Home Run Cable Length N/A Home Run Connector Mini-Change? - 5 pole Home Run Interface Integrated Connector Keyway Single LED Indicator No Material - Cable Jacket N/A Material - Housing PBT Material - Metal Copper Material - Plating Mating Gold over Nickel Orientation Top Mount Poles 5 Poles (wired) 5 Ports 8 Temperature Range - Operating -20°C to +90°C Wiring Configuration Single I/O per Port Electrical Current - Maximum per Contact 4A per po

This document was generated on 06/02/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: 1300370011 Status: Active Overview: devicenet_industrial_networks Description: DeviceNet* Micro-Change? (M12), 8 Port, Micro-Change 5 Poles, Male, 2.0m (6.56' ) Cable Documents: Drawing (PDF) RoHS Certificate of Compliance (PDF) General Product Family Passive Distribution Boxes Series 130037 IP Rating IP67 Overview devicenet_industrial_networks Product Name DeviceNet*, Micro-Change? (M12) Physical Bus I/O Micro-Change? (M12) Cable Connector Orientation Straight Cable Length 2.0m (6.56' ) Home Run Cable Length 2.0m (6.56' ) Home Run Connector Micro-Change? (M12) - 5 pole Home Run Interface Field Attachable Cable Keyway Single LED Indicator No Material - Cable Jacket PVC Material - Housing PBT Material - Metal Copper Material - Plating Mating Gold over Nickel Orientation Side Mount Poles 5 Poles (wired) 5 Ports 8 Temperature Range - Operating -20°C to +90°C Wiring Configuration S

This document was generated on 06/02/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: 1300370011 Status: Active Overview: devicenet_industrial_networks Description: DeviceNet* Micro-Change? (M12), 8 Port, Micro-Change 5 Poles, Male, 2.0m (6.56' ) Cable Documents: Drawing (PDF) RoHS Certificate of Compliance (PDF) General Product Family Passive Distribution Boxes Series 130037 IP Rating IP67 Overview devicenet_industrial_networks Product Name DeviceNet*, Micro-Change? (M12) Physical Bus I/O Micro-Change? (M12) Cable Connector Orientation Straight Cable Length 2.0m (6.56' ) Home Run Cable Length 2.0m (6.56' ) Home Run Connector Micro-Change? (M12) - 5 pole Home Run Interface Field Attachable Cable Keyway Single LED Indicator No Material - Cable Jacket PVC Material - Housing PBT Material - Metal Copper Material - Plating Mating Gold over Nickel Orientation Side Mount Poles 5 Poles (wired) 5 Ports 8 Temperature Range - Operating -20°C to +90°C Wiring Configuration S

UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright ? 2014 Unisonic Technologies Co., Ltd QW-R223-016.b NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION ? DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003ADA is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light. ? FEATURES * High collector-base breakdown voltage * Low reverse leakage current * High reliability ? EQUIVALENT CIRCUIT ? ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 13003ADAL-TM3-T 13003ADAG-TM3-T TO-251 B C E Tube 13003ADAL-T60-K 13003ADAG-T60-K TO-126 B C E Bulk 13003ADAL-T92-B 13003ADAG-

UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 5 Copyright ? 2014 Unisonic Technologies Co., Ltd QW-R223-023.b NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ T C =100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical t C = 290ns @ 1A, 100°C. * 700V blocking capability ? APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ? EQUIVALENT CIRCUIT ? ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 13003ADGL-TM3-T 13003ADGP-TM3-T TO-251 B C E Tube 13003ADGL-T60-K 13003ADGP-T60-K TO-126 B C E Bulk 13003A

UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright ? 2014 Unisonic Technologies Co., Ltd QW-R223-017.b NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION ? DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003BDG is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light. ? FEATURES * High collector-base breakdown voltage * Low reverse leakage current * High reliability ? EQUIVALENT CIRCUIT ? ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 13003BDGL-TM3-T 13003BDGP-TM3-T TO-251 B C E Tube 13003BDGL-T60-K 13003BDGP-T60-K TO-126 B C E Bulk 13003BDGL-T92-B 13003BDG