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  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求

更新日期:2024-04-01 00:04:00

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产品简介:BAG SHLD METAL-IN 8X8

  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求

12712 中文资料属性参数

  • 标准包装:100
  • 类别:静电控制,ESD,无尘室产品
  • 家庭:屏蔽包,材料
  • 系列:Statshield®
  • 类型:静电屏蔽袋
  • 金属层:输入
  • 厚度:3.1 mil(78.74 微米)
  • 长度 - 内部:8"(203.2mm)
  • 宽度 - 内部:8"(203.2mm)
  • 张力强度:-
  • 颜色:

12712 数据手册

数据手册 说明 数量 操作
127123FB

40 1.27 mm Specifications: 6-100 Circuits Insulator material Max. Processing Temp Terminal Material Plating Max. Current Rating Voltage Rating Dielectric Strength : Black High Temp . Plastic : Phosphor Bronze : Selective Plated(Gold/Tin) or full Gold Plated. : 1.0A : 150V AC : 500V(Min. 60 seconds) 127123FB Series Mates with SUYIN 127196,127107,127108 Series Order Information Recommended P.C.B. Layout Dimensional Information SUYIN P/NO. DIM.A 4.21 5.94 6.75 8.02 9.29 10.56 11.83 13.10 15.64 19.45 21.99 25.80 32.15 38.50 51.20 63.90 DIM.B 2.54 3.81 5.08 6.35 7.62 8.89 10.16 11.43 13.97 17.78 20.32 24.13 30.48 36.83 49.53 62.23 1.27X1.27mm DUAL ROW SOCKET RIGHT ANGLE SMD TYPE 12 3 45 1. 'B' : Right Angle SMT Type 2. No. of Pins 3. Plating 4. Color 'Z' : Black 5. Package 'U' : Tube Package Without CAP Reference Page 11

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127124

? 2004 OSA Opto Light GmbH ? Tel. +49-(0)30-65 76 26 83 ? Fax +49-(0)30-65 76 26 81 ? contact@osa-opto.com INFRA-RED Item No.: 127124 1. This specification applies to GaAlAs / GaAs Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes p-side (anode) Au alloy n-side (cathode) Au alloy 3. Outlines (dimensions in microns) Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min typ max Unit Forward voltage V F I F = 20 mA 1,70 2,10 V Reverse voltage V R I R = 5 μA 10 V output Power * Φ e I F = 20 mA 0,6 0,8 mW Switching time t r , t f I F = 20 mA 40 ns Peak wavelength λ P I F = 20 mA 740 nm Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φ e typ Quantity min max n-Epitaxy GaAlAs n-Electrode p-Substrate GaAs Active La

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